Infineon · FETs & Power MOSFETs · MPN IPB80N08S2L07ATMA1
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| Gate Charge(Qg) | 233nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Output Capacitance(Coss) | 1.3nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
| Type | N-Channel |
N-Channel 75V 80A 300W Surface Mount TO-263