Infineon · FETs & Power MOSFETs · MPN IPB80N06S4L07ATMA2
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.27nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.68nF |
| Type | N-Channel |
N-Channel 60V 80A 79W Surface Mount TO-263-3