Infineon · FETs & Power MOSFETs · MPN IPB80N06S2L-06
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
55V 80A 2V 250W 6mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS