Infineon · FETs & Power MOSFETs · MPN IPB80N06S2-09
No reviews yet — be the first to review Infineon IPB80N06S2-09.
| Drain to Source Voltage | 55V |
|---|---|
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 9.1mΩ@10V |
| Number | 1 N-channel |
55V 80A 4V 190W 9.1mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS