Infineon · FETs & Power MOSFETs · MPN IPB80N04S3-04
No reviews yet — be the first to review Infineon IPB80N04S3-04.
| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 3.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.2nF |
40V 80A 4V 136W 3.8mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS