Infineon IPB80N04S3-03

Infineon · FETs & Power MOSFETs · MPN IPB80N04S3-03

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Specifications

Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation188W
RDS(on)3.2mΩ@10V
Number1 N-channel

Technical details

40V 80A 4V 188W 3.2mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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