Infineon IPB70P04P4-09

Infineon · FETs & Power MOSFETs · MPN IPB70P04P4-09

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)6.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF

Technical details

40V 72A 3V 75W 6.9mΩ@10V 1 P-Channel TO-263-3 Single FETs, MOSFETs RoHS

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