Infineon IPB70N12S3-11

Infineon · FETs & Power MOSFETs · MPN IPB70N12S3-11

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Specifications

Drain to Source Voltage120V
Current - Continuous Drain(Id)70A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)11.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.355nF

Technical details

120V 70A 4V 125W 11.6mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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