Infineon · FETs & Power MOSFETs · MPN IPB70N10S3-12
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| RDS(on) | 11.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.355nF |
100V 70A 4V 125W 11.3mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS