Infineon · FETs & Power MOSFETs · MPN IPB70N04S406ATMA1
No reviews yet — be the first to review Infineon IPB70N04S406ATMA1.
| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 640pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
| Type | N-Channel |
N-Channel 40V 70A 58W Surface Mount TO-263