Infineon · FETs & Power MOSFETs · MPN IPB65R660CFDA
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62.5W |
| RDS(on) | 660mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 543pF |
N-Channel 650V 6A 62.5W Surface Mount TO-263-3