Infineon · FETs & Power MOSFETs · MPN IPB65R310CFDA
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| Output Capacitance(Coss) | 55pF |
|---|---|
| Pd - Power Dissipation | 104.2W |
| Configuration | - |
| Gate Charge(Qg) | 41nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
104.2W 650V 11.4A 4V 280mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS