Infineon · FETs & Power MOSFETs · MPN IPB65R310CFD
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 104.2W |
| RDS(on) | 310mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
N-Channel 650V 11.4A 104.2W Surface Mount TO-263