Infineon · FETs & Power MOSFETs · MPN IPB65R190CFDA
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 17.5A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 151W |
| Reverse Transfer Capacitance (Crss@Vds) | 336pF |
| RDS(on) | 190mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.85nF |
650V 17.5A 151W Surface Mount TO-263