Infineon · FETs & Power MOSFETs · MPN IPB65R190CFD7AATMA1
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 77W |
| Reverse Transfer Capacitance (Crss@Vds) | 479pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.291nF |
650V 9A 4V 77W 190mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS