Infineon · FETs & Power MOSFETs · MPN IPB65R155CFD7ATMA1
No reviews yet — be the first to review Infineon IPB65R155CFD7ATMA1.
| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 77W |
| RDS(on) | 155mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.283nF |
| Type | N-Channel |
650V 15A 4.5V 77W 155mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS