Infineon · FETs & Power MOSFETs · MPN IPB65R125C7
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 101W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.67nF |
650V 12A 3.5V 101W 125mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS