Infineon · FETs & Power MOSFETs · MPN IPB65R110CFDA
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| Gate Charge(Qg) | 118nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 31.2A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 277.8W |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.24nF |
| Type | N-Channel |
N-Channel 650V 31.2A 277.8W Surface Mount TO-263-3