Infineon · FETs & Power MOSFETs · MPN IPB65R041CFD7ATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.825nF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.975nF |
| Type | N-Channel |
650V 50A 4.5V 227W 41mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS