Infineon · FETs & Power MOSFETs · MPN IPB60R520CP
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Output Capacitance(Coss) | 32pF |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 520mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 630pF |
650V 6.8A 3.5V 66W 520mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS