Infineon · FETs & Power MOSFETs · MPN IPB60R299CP
No reviews yet — be the first to review Infineon IPB60R299CP.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 29nC@10V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 299mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
600V 11A 3.5V 96W 299mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS