Infineon IPB60R280P7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPB60R280P7ATMA1

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)761pF

Technical details

N-Channel 600V 12A 53W Surface Mount TO-263-3

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