Infineon · FETs & Power MOSFETs · MPN IPB60R280P6
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| Gate Charge(Qg) | 25.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 182pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.19nF |
650V 8.8A 4V 104W 280mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS