Infineon · FETs & Power MOSFETs · MPN IPB60R280C6ATMA1
No reviews yet — be the first to review Infineon IPB60R280C6ATMA1.
| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 13.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 950pF |
N-Channel 600V 13.8A 104W Surface Mount TO-263-3