Infineon IPB60R210CFD7

Infineon · FETs & Power MOSFETs · MPN IPB60R210CFD7

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Specifications

Configuration-
Gate Charge(Qg)23nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation64W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)210mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.015nF

Technical details

600V 7A 3.5V 64W 210mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

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