Infineon · FETs & Power MOSFETs · MPN IPB60R190C6
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 20.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 151W |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Vgs | ±20V |
N-Channel 600V 20.2A 151W Surface Mount TO-263