Infineon IPB60R180P7

Infineon · FETs & Power MOSFETs · MPN IPB60R180P7

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.081nF

Technical details

N-Channel 600V 18A 72W Surface Mount TO-263-3

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