Infineon · FETs & Power MOSFETs · MPN IPB60R170CFD7
No reviews yet — be the first to review Infineon IPB60R170CFD7.
| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.199nF |
9A 4V 75W 170mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS