Infineon · FETs & Power MOSFETs · MPN IPB60R160P6
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 23.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 144mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.08nF |
650V 23.8A 4V 176W 144mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS