Infineon IPB60R160C6

Infineon · FETs & Power MOSFETs · MPN IPB60R160C6

No reviews yet — be the first to review Infineon IPB60R160C6.

Specifications

Drain to Source Voltage600V
Current - Continuous Drain(Id)23.8A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation176W
RDS(on)160mΩ@10V
Number1 N-channel

Technical details

600V 23.8A 3.5V 176W 160mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs