Infineon · FETs & Power MOSFETs · MPN IPB60R160C6
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| Drain to Source Voltage | 600V |
|---|---|
| Current - Continuous Drain(Id) | 23.8A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 176W |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
600V 23.8A 3.5V 176W 160mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS