Infineon · FETs & Power MOSFETs · MPN IPB60R125C6
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 219W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.127nF |
650V 30A 3V 219W 110mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS