Infineon · FETs & Power MOSFETs · MPN IPB60R099P7ATMA1
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 117W |
| Reverse Transfer Capacitance (Crss@Vds) | 648pF |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.952nF |
N-Channel 600V 31A 117W Surface Mount TO-263-3