Infineon IPB60R099CPA

Infineon · FETs & Power MOSFETs · MPN IPB60R099CPA

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation255W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF

Technical details

600V 31A 3V 255W 90mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS

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