Infineon · FETs & Power MOSFETs · MPN IPB60R080P7ATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 51nC@10V |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 129W |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
N-Channel 23A 129W Surface Mount TO-263-3