Infineon · FETs & Power MOSFETs · MPN IPB60R060C7ATMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Output Capacitance(Coss) | 54pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 162W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.05nF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
600V 35A 4V 162W 60mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS