Infineon · FETs & Power MOSFETs · MPN IPB60R055CFD7
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 178W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.194nF |
N-Channel 600V 38A 178W Surface Mount TO-263-3