Infineon · FETs & Power MOSFETs · MPN IPB60R045P7
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| Gate Charge(Qg) | 90nC@400V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 201W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.212nF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.891nF |
38A 201W 45mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS