Infineon · FETs & Power MOSFETs · MPN IPB50N12S3L-15
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| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 15.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.18nF |
120V 50A 2.4V 100W 15.4mΩ@10V 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS