Infineon IPB407N30N

Infineon · FETs & Power MOSFETs · MPN IPB407N30N

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage300V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)40.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.18nF

Technical details

N-Channel 300V 44A 300W Surface Mount TO-263-3

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