Infineon · FETs & Power MOSFETs · MPN IPB35N10S3L26ATMA1
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| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 26.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | N-Channel |
100V 35A 2.4V 71W 26.3mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS