Infineon · FETs & Power MOSFETs · MPN IPB339N20NM6ATMA1
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| Output Capacitance(Coss) | 190pF |
|---|---|
| Pd - Power Dissipation | 125W |
| Gate Charge(Qg) | 15.9nC |
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 24.2mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
125W 200V 3.7V 24.2mΩ@15V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS