Infineon · FETs & Power MOSFETs · MPN IPB330P10NMATMA1
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| Gate Charge(Qg) | 236nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 750pF |
| Current - Continuous Drain(Id) | 62A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11nF |
| Type | P-Channel |
P-Channel 100V 62A 300W Surface Mount TO-263-3