Infineon · FETs & Power MOSFETs · MPN IPB320P10LMATMA1
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| Gate Charge(Qg) | 219nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 690pF |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 37mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11nF |
| Type | P-Channel |
100V 63A 2V 300W 37mΩ@4.5V 1 P-Channel P-Channel TO-263-3 Single FETs, MOSFETs RoHS