Infineon IPB230N06L3G

Infineon · FETs & Power MOSFETs · MPN IPB230N06L3G

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

60V 30A 2.2V 36W 23mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

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