Infineon · FETs & Power MOSFETs · MPN IPB200N15N3 G
No reviews yet — be the first to review Infineon IPB200N15N3 G.
| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 214pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.82nF |
| Type | N-Channel |
150V 50A 4V 150W 20mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS