Infineon · FETs & Power MOSFETs · MPN IPB19DP10NMATMA1
No reviews yet — be the first to review Infineon IPB19DP10NMATMA1.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 13.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2nF |
| Type | P-Channel |
P-Channel 100V 13.8A 83W Surface Mount TO-263-3