Infineon IPB180P04P4L-02

Infineon · FETs & Power MOSFETs · MPN IPB180P04P4L-02

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)2.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)18.7nF

Technical details

P-Channel 40V 180A 150W TO-263-7

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