Infineon · FETs & Power MOSFETs · MPN IPB180N08S4-02
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| Gate Charge(Qg) | 167nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 277W |
| Reverse Transfer Capacitance (Crss@Vds) | 354pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.55nF |
N-Channel 80V 180A 277W TO-263-7