Infineon · FETs & Power MOSFETs · MPN IPB180N06S4H1ATMA2
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| Gate Charge(Qg) | 270nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 5.36nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 21.9nF |
| Type | N-Channel |
N-Channel 60V 180A 250W TO-263-7