Infineon · FETs & Power MOSFETs · MPN IPB180N04S4L-01
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 245nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 19.1nF |
40V 180A 2.2V 188W 1.2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS